EiceDRIVER™ X3 Isolated Gate Driver ICs Optimized for Silicon Carbide Switches

Infineon Technologies EiceDRIVER X3 compact gate driver family features high CMTI robustness and optimized propagation delay for higher switching frequencies combined with separate output options, active shutdown, short-circuit clamping, and is designed for use with IGBTs, silicon, and silicon carbide MOSFETs. The Generation 2 X3 compact family offers devices in an LDSO-8 300 mil wide body package (8 mm creepage) and a DSO-8 150 mil narrow body package with CTI >600 and UL 1577 certification.

Three development boards are available for evaluation of the EiceDRIVER 1ED-X3 single-channel gate driver ICs in a half-bridge configuration. The EVAL1ED3142MC12HSICTOBO1, EVAL1ED3144MC12HSICTOBO1, and EVAL1ED3145MC12HSICTOBO1 each include two of the respective EiceDRIVER X3 compact gate driver ICs, two IMZA120R020M1H CoolSiC™ 1,200 V SiC trench MOSFETs, and a galvanically isolated onboard power supply generated with the EiceDRIVER power 2EP130R transformer driver IC. Each board can be used to evaluate other ICs from the 1ED314xMC12H family by replacing the gate driver IC.